| PART |
Description |
Maker |
| PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| AMMP-5620 |
6 - 20 GHz High Gain Amplife
|
AVAGO TECHNOLOGIES
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| RFMA0912-0.5W-Q7 |
9.5 - 11.7 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA5872-1W-Q7 |
5.8 - 7.2 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA5880-0.5W-Q7 |
5.8 - 8.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD1044H CGD1044H-2015 |
1 GHz, 25 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| CGD1042H CGD1042H-2015 |
1 GHz, 23 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
